Fabrication and study of photovoltaic material CuInxGa1-xSe2 bulk and thin films obtained by the technique of close-spaced vapor transport
Identifieur interne : 00F394 ( Main/Repository ); précédent : 00F393; suivant : 00F395Fabrication and study of photovoltaic material CuInxGa1-xSe2 bulk and thin films obtained by the technique of close-spaced vapor transport
Auteurs : RBID : Pascal:02-0305684Descripteurs français
- Pascal (Inist)
- Effet photovoltaïque, Phénomène transport, Préparation, Cellule solaire, Méthode Bridgman, Système ordonné, Dispositif photovoltaïque, Spectrométrie dispersive, Microscopie électronique balayage, Diffraction RX, Procédé fabrication, Dépôt chimique phase vapeur, Couche mince, Gallium séléniure, Indium séléniure, Cuivre séléniure, Composé quaternaire, CuInxGa1-xSe2, Cu In Ga Se, 8460J, 8170J, 6182F.
English descriptors
- KwdEn :
- Bridgman method, Chemical vapor deposition, Copper selenides, Dispersive spectrometry, Gallium selenides, Indium selenides, Manufacturing process, Ordered systems, Photovoltaic cell, Photovoltaic effect, Preparation, Quaternary compound, Scanning electron microscopy, Solar cell, Thin film, Transport process, X ray diffraction.
Abstract
We present the technique of preparation of the material photovoltaic CuInxGa1-xSe2 thin films for the fabrication of solar cells. Bulk materials were synthesized by the Bridgman technique using the elements, Cu, Ga, In and Se. We have realized thin films by close-spaced vapor transport (CSVT) in a closed tube where the iodine is the transport agent. The CSVT technique is simple [J. Appl. Phys. 84 (1998) 1; Thin Solid Films 226 (1993) 254], cheap and allows the production of samples with good crystalline qualities, in order to produce photovoltaic cells for solar energy conversion. The bulk samples and thin films were characterized by energy dispersive spectrometry, scanning electron microscope, hot point probe method and X-ray diffraction.
Links toward previous steps (curation, corpus...)
- to stream Main, to step Corpus: 00F218
Links to Exploration step
Pascal:02-0305684Le document en format XML
<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Fabrication and study of photovoltaic material CuIn<sub>x</sub>Ga<sub>1-x</sub>Se<sub>2</sub> bulk and thin films obtained by the technique of close-spaced vapor transport</title><author><name sortKey="El Haj Moussa, G W" uniqKey="El Haj Moussa G">G. W. El Haj Moussa</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Laboratoire Physique des Semi-conduceurs et Energétique (LPSE), Département de Physique, Faculté des Sciences II, Université Libanaise, BP 90656</s1><s2>Beirut</s2><s3>LBN</s3><sZ>1 aut.</sZ><sZ>3 aut.</sZ></inist:fA14><country>Liban</country><wicri:noRegion>Beirut</wicri:noRegion></affiliation><affiliation wicri:level="3"><inist:fA14 i1="02"><s1>Faculté Sciences et Techniques du Languedoc, Centre Electronique et Micro-optoélectronique de Montpellier (CEM2), Université de Montpellier Il Place Eugène Bataillon</s1><s2>34095 Montpellier</s2><s3>FRA</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country>France</country><placeName><region type="region" nuts="2">Languedoc-Roussillon</region><settlement type="city">Montpellier</settlement></placeName></affiliation></author><author><name>ARISWAN</name><affiliation wicri:level="3"><inist:fA14 i1="02"><s1>Faculté Sciences et Techniques du Languedoc, Centre Electronique et Micro-optoélectronique de Montpellier (CEM2), Université de Montpellier Il Place Eugène Bataillon</s1><s2>34095 Montpellier</s2><s3>FRA</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country>France</country><placeName><region type="region" nuts="2">Languedoc-Roussillon</region><settlement type="city">Montpellier</settlement></placeName></affiliation></author><author><name sortKey="Khoury, A" uniqKey="Khoury A">A. Khoury</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Laboratoire Physique des Semi-conduceurs et Energétique (LPSE), Département de Physique, Faculté des Sciences II, Université Libanaise, BP 90656</s1><s2>Beirut</s2><s3>LBN</s3><sZ>1 aut.</sZ><sZ>3 aut.</sZ></inist:fA14><country>Liban</country><wicri:noRegion>Beirut</wicri:noRegion></affiliation></author><author><name sortKey="Guastavino, F" uniqKey="Guastavino F">F. Guastavino</name><affiliation wicri:level="3"><inist:fA14 i1="02"><s1>Faculté Sciences et Techniques du Languedoc, Centre Electronique et Micro-optoélectronique de Montpellier (CEM2), Université de Montpellier Il Place Eugène Bataillon</s1><s2>34095 Montpellier</s2><s3>FRA</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country>France</country><placeName><region type="region" nuts="2">Languedoc-Roussillon</region><settlement type="city">Montpellier</settlement></placeName></affiliation></author><author><name sortKey="Llinares, C" uniqKey="Llinares C">C. Llinares</name><affiliation wicri:level="3"><inist:fA14 i1="02"><s1>Faculté Sciences et Techniques du Languedoc, Centre Electronique et Micro-optoélectronique de Montpellier (CEM2), Université de Montpellier Il Place Eugène Bataillon</s1><s2>34095 Montpellier</s2><s3>FRA</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country>France</country><placeName><region type="region" nuts="2">Languedoc-Roussillon</region><settlement type="city">Montpellier</settlement></placeName></affiliation></author></titleStmt><publicationStmt><idno type="inist">02-0305684</idno><date when="2002">2002</date><idno type="stanalyst">PASCAL 02-0305684 INIST</idno><idno type="RBID">Pascal:02-0305684</idno><idno type="wicri:Area/Main/Corpus">00F218</idno><idno type="wicri:Area/Main/Repository">00F394</idno></publicationStmt><seriesStmt><idno type="ISSN">0038-1098</idno><title level="j" type="abbreviated">Solid state commun.</title><title level="j" type="main">Solid state communications</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Bridgman method</term><term>Chemical vapor deposition</term><term>Copper selenides</term><term>Dispersive spectrometry</term><term>Gallium selenides</term><term>Indium selenides</term><term>Manufacturing process</term><term>Ordered systems</term><term>Photovoltaic cell</term><term>Photovoltaic effect</term><term>Preparation</term><term>Quaternary compound</term><term>Scanning electron microscopy</term><term>Solar cell</term><term>Thin film</term><term>Transport process</term><term>X ray diffraction</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>Effet photovoltaïque</term><term>Phénomène transport</term><term>Préparation</term><term>Cellule solaire</term><term>Méthode Bridgman</term><term>Système ordonné</term><term>Dispositif photovoltaïque</term><term>Spectrométrie dispersive</term><term>Microscopie électronique balayage</term><term>Diffraction RX</term><term>Procédé fabrication</term><term>Dépôt chimique phase vapeur</term><term>Couche mince</term><term>Gallium séléniure</term><term>Indium séléniure</term><term>Cuivre séléniure</term><term>Composé quaternaire</term><term>CuInxGa1-xSe2</term><term>Cu In Ga Se</term><term>8460J</term><term>8170J</term><term>6182F</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">We present the technique of preparation of the material photovoltaic CuIn<sub>x</sub>Ga<sub>1-x</sub>Se<sub>2</sub> thin films for the fabrication of solar cells. Bulk materials were synthesized by the Bridgman technique using the elements, Cu, Ga, In and Se. We have realized thin films by close-spaced vapor transport (CSVT) in a closed tube where the iodine is the transport agent. The CSVT technique is simple [J. Appl. Phys. 84 (1998) 1; Thin Solid Films 226 (1993) 254], cheap and allows the production of samples with good crystalline qualities, in order to produce photovoltaic cells for solar energy conversion. The bulk samples and thin films were characterized by energy dispersive spectrometry, scanning electron microscope, hot point probe method and X-ray diffraction.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0038-1098</s0></fA01><fA02 i1="01"><s0>SSCOA4</s0></fA02><fA03 i2="1"><s0>Solid state commun.</s0></fA03><fA05><s2>122</s2></fA05><fA06><s2>3-4</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>Fabrication and study of photovoltaic material CuIn<sub>x</sub>Ga<sub>1-x</sub>Se<sub>2</sub> bulk and thin films obtained by the technique of close-spaced vapor transport</s1></fA08><fA11 i1="01" i2="1"><s1>EL HAJ MOUSSA (G. W.)</s1></fA11><fA11 i1="02" i2="1"><s1>ARISWAN</s1></fA11><fA11 i1="03" i2="1"><s1>KHOURY (A.)</s1></fA11><fA11 i1="04" i2="1"><s1>GUASTAVINO (F.)</s1></fA11><fA11 i1="05" i2="1"><s1>LLINARES (C.)</s1></fA11><fA14 i1="01"><s1>Laboratoire Physique des Semi-conduceurs et Energétique (LPSE), Département de Physique, Faculté des Sciences II, Université Libanaise, BP 90656</s1><s2>Beirut</s2><s3>LBN</s3><sZ>1 aut.</sZ><sZ>3 aut.</sZ></fA14><fA14 i1="02"><s1>Faculté Sciences et Techniques du Languedoc, Centre Electronique et Micro-optoélectronique de Montpellier (CEM2), Université de Montpellier Il Place Eugène Bataillon</s1><s2>34095 Montpellier</s2><s3>FRA</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ></fA14><fA20><s1>195-199</s1></fA20><fA21><s1>2002</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>10917</s2><s5>354000101216720170</s5></fA43><fA44><s0>0000</s0><s1>© 2002 INIST-CNRS. All rights reserved.</s1></fA44><fA45><s0>22 ref.</s0></fA45><fA47 i1="01" i2="1"><s0>02-0305684</s0></fA47><fA60><s1>P</s1></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Solid state communications</s0></fA64><fA66 i1="01"><s0>USA</s0></fA66><fC01 i1="01" l="ENG"><s0>We present the technique of preparation of the material photovoltaic CuIn<sub>x</sub>Ga<sub>1-x</sub>Se<sub>2</sub> thin films for the fabrication of solar cells. Bulk materials were synthesized by the Bridgman technique using the elements, Cu, Ga, In and Se. We have realized thin films by close-spaced vapor transport (CSVT) in a closed tube where the iodine is the transport agent. The CSVT technique is simple [J. Appl. Phys. 84 (1998) 1; Thin Solid Films 226 (1993) 254], cheap and allows the production of samples with good crystalline qualities, in order to produce photovoltaic cells for solar energy conversion. The bulk samples and thin films were characterized by energy dispersive spectrometry, scanning electron microscope, hot point probe method and X-ray diffraction.</s0></fC01><fC02 i1="01" i2="X"><s0>001D06C02D1</s0></fC02><fC02 i1="02" i2="3"><s0>001B80A70</s0></fC02><fC02 i1="03" i2="3"><s0>001B60A82F</s0></fC02><fC02 i1="04" i2="X"><s0>230</s0></fC02><fC03 i1="01" i2="X" l="FRE"><s0>Effet photovoltaïque</s0><s5>02</s5></fC03><fC03 i1="01" i2="X" l="ENG"><s0>Photovoltaic effect</s0><s5>02</s5></fC03><fC03 i1="01" i2="X" l="SPA"><s0>Efecto fotovoltaico</s0><s5>02</s5></fC03><fC03 i1="02" i2="X" l="FRE"><s0>Phénomène transport</s0><s5>03</s5></fC03><fC03 i1="02" i2="X" l="ENG"><s0>Transport process</s0><s5>03</s5></fC03><fC03 i1="02" i2="X" l="SPA"><s0>Fenómeno transporte</s0><s5>03</s5></fC03><fC03 i1="03" i2="X" l="FRE"><s0>Préparation</s0><s5>04</s5></fC03><fC03 i1="03" i2="X" l="ENG"><s0>Preparation</s0><s5>04</s5></fC03><fC03 i1="03" i2="X" l="SPA"><s0>Preparación</s0><s5>04</s5></fC03><fC03 i1="04" i2="X" l="FRE"><s0>Cellule solaire</s0><s5>05</s5></fC03><fC03 i1="04" i2="X" l="ENG"><s0>Solar cell</s0><s5>05</s5></fC03><fC03 i1="04" i2="X" l="SPA"><s0>Célula solar</s0><s5>05</s5></fC03><fC03 i1="05" i2="X" l="FRE"><s0>Méthode Bridgman</s0><s5>06</s5></fC03><fC03 i1="05" i2="X" l="ENG"><s0>Bridgman method</s0><s5>06</s5></fC03><fC03 i1="05" i2="X" l="SPA"><s0>Método Bridgman</s0><s5>06</s5></fC03><fC03 i1="06" i2="3" l="FRE"><s0>Système ordonné</s0><s5>07</s5></fC03><fC03 i1="06" i2="3" l="ENG"><s0>Ordered systems</s0><s5>07</s5></fC03><fC03 i1="07" i2="X" l="FRE"><s0>Dispositif photovoltaïque</s0><s5>08</s5></fC03><fC03 i1="07" i2="X" l="ENG"><s0>Photovoltaic cell</s0><s5>08</s5></fC03><fC03 i1="07" i2="X" l="SPA"><s0>Dispositivo fotovoltaico</s0><s5>08</s5></fC03><fC03 i1="08" i2="X" l="FRE"><s0>Spectrométrie dispersive</s0><s5>09</s5></fC03><fC03 i1="08" i2="X" l="ENG"><s0>Dispersive spectrometry</s0><s5>09</s5></fC03><fC03 i1="08" i2="X" l="SPA"><s0>Espectrometría dispersiva</s0><s5>09</s5></fC03><fC03 i1="09" i2="X" l="FRE"><s0>Microscopie électronique balayage</s0><s5>10</s5></fC03><fC03 i1="09" i2="X" l="ENG"><s0>Scanning electron microscopy</s0><s5>10</s5></fC03><fC03 i1="09" i2="X" l="SPA"><s0>Microscopía electrónica barrido</s0><s5>10</s5></fC03><fC03 i1="10" i2="X" l="FRE"><s0>Diffraction RX</s0><s5>11</s5></fC03><fC03 i1="10" i2="X" l="ENG"><s0>X ray diffraction</s0><s5>11</s5></fC03><fC03 i1="10" i2="X" l="SPA"><s0>Difracción RX</s0><s5>11</s5></fC03><fC03 i1="11" i2="X" l="FRE"><s0>Procédé fabrication</s0><s5>12</s5></fC03><fC03 i1="11" i2="X" l="ENG"><s0>Manufacturing process</s0><s5>12</s5></fC03><fC03 i1="11" i2="X" l="SPA"><s0>Procedimiento fabricación</s0><s5>12</s5></fC03><fC03 i1="12" i2="X" l="FRE"><s0>Dépôt chimique phase vapeur</s0><s5>13</s5></fC03><fC03 i1="12" i2="X" l="ENG"><s0>Chemical vapor deposition</s0><s5>13</s5></fC03><fC03 i1="12" i2="X" l="SPA"><s0>Depósito químico fase vapor</s0><s5>13</s5></fC03><fC03 i1="13" i2="X" l="FRE"><s0>Couche mince</s0><s5>15</s5></fC03><fC03 i1="13" i2="X" l="ENG"><s0>Thin film</s0><s5>15</s5></fC03><fC03 i1="13" i2="X" l="SPA"><s0>Capa fina</s0><s5>15</s5></fC03><fC03 i1="14" i2="3" l="FRE"><s0>Gallium séléniure</s0><s2>NK</s2><s5>16</s5></fC03><fC03 i1="14" i2="3" l="ENG"><s0>Gallium selenides</s0><s2>NK</s2><s5>16</s5></fC03><fC03 i1="15" i2="3" l="FRE"><s0>Indium séléniure</s0><s2>NK</s2><s5>17</s5></fC03><fC03 i1="15" i2="3" l="ENG"><s0>Indium selenides</s0><s2>NK</s2><s5>17</s5></fC03><fC03 i1="16" i2="3" l="FRE"><s0>Cuivre séléniure</s0><s2>NK</s2><s5>18</s5></fC03><fC03 i1="16" i2="3" l="ENG"><s0>Copper selenides</s0><s2>NK</s2><s5>18</s5></fC03><fC03 i1="17" i2="X" l="FRE"><s0>Composé quaternaire</s0><s5>19</s5></fC03><fC03 i1="17" i2="X" l="ENG"><s0>Quaternary compound</s0><s5>19</s5></fC03><fC03 i1="17" i2="X" l="SPA"><s0>Compuesto cuaternario</s0><s5>19</s5></fC03><fC03 i1="18" i2="X" l="FRE"><s0>CuInxGa1-xSe2</s0><s4>INC</s4><s5>52</s5></fC03><fC03 i1="19" i2="X" l="FRE"><s0>Cu In Ga Se</s0><s4>INC</s4><s5>53</s5></fC03><fC03 i1="20" i2="X" l="FRE"><s0>8460J</s0><s2>PAC</s2><s4>INC</s4><s5>56</s5></fC03><fC03 i1="21" i2="X" l="FRE"><s0>8170J</s0><s2>PAC</s2><s4>INC</s4><s5>57</s5></fC03><fC03 i1="22" i2="X" l="FRE"><s0>6182F</s0><s2>PAC</s2><s4>INC</s4><s5>58</s5></fC03><fC07 i1="01" i2="1" l="FRE"><s0>Métal transition composé</s0><s5>48</s5></fC07><fC07 i1="01" i2="1" l="ENG"><s0>Transition metal compounds</s0><s5>48</s5></fC07><fC07 i1="02" i2="X" l="FRE"><s0>Composé minéral</s0><s5>49</s5></fC07><fC07 i1="02" i2="X" l="ENG"><s0>Inorganic compound</s0><s5>49</s5></fC07><fC07 i1="02" i2="X" l="SPA"><s0>Compuesto inorgánico</s0><s5>49</s5></fC07><fN21><s1>175</s1></fN21><fN82><s1>PSI</s1></fN82></pA></standard></inist></record>Pour manipuler ce document sous Unix (Dilib)
EXPLOR_STEP=IndiumV3/Data/Main/Repository
HfdSelect -h $EXPLOR_STEP/biblio.hfd -nk 00F394 | SxmlIndent | more
Ou
HfdSelect -h $EXPLOR_AREA/Data/Main/Repository/biblio.hfd -nk 00F394 | SxmlIndent | more
Pour mettre un lien sur cette page dans le réseau Wicri
{{Explor lien
|wiki= *** parameter Area/wikiCode missing ***
|area= IndiumV3
|flux= Main
|étape= Repository
|type= RBID
|clé= Pascal:02-0305684
|texte= Fabrication and study of photovoltaic material CuInxGa1-xSe2 bulk and thin films obtained by the technique of close-spaced vapor transport
}}
| This area was generated with Dilib version V0.5.77. |  |